InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations
D. Lackner, M. Steger, M. L. W. Thewalt, O. J. Pitts, Y. T. Cherng et al.
InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been proposed as an alternative to InAs/(In)GaSb short period superlattices for mid- to long infrared photodetectors. Photoluminescence data at 4 K of OMVPE grown InAsSb (multi-) quantum wells in an InAs matrix o ... [J. Appl. Phys. 111, 034507 (2012)] published Fri Feb 10, 2012.
On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode
Yasemin Şafak, Murat Soylu, Fahrettin Yakuphanoglu, and Şemsettin Altındal
The energy density distribution profile of the interface states (N) and their relaxation time (tau) of Al/pentacene/p-GaAs heterojunction diodes were obtained from the admittance spectroscopy method, which is included in capacitance/conductance-voltage measurements in the frequency range of 10 kHz-1 ... [J. Appl. Phys. 111, 034508 (2012)] published Fri Feb 10, 2012.
Large converse magnetoelectric response in Rosen-type transformer and Terfenol-D laminated composite
Jian-Ping Zhou, Pan Wang, Jia Yang, Peng Liu, and Huai-Wu Zhang
A magnetoelectric laminate composite was proposed by combing a piezoelectric transformer and a Terfenol-D plate. Converse magnetoelectric effect was researched by using an induction method with frequency, bias magnetic field, ac voltage, and Terfenol-D thickness. A giant converse magnetoelectric coe ... [J. Appl. Phys. 111, 033915 (2012)] published Fri Feb 10, 2012.
Analytical study and corresponding experiments for a new resonant magnetic charger with circular spiral coils
Junhua Wang, Jiangui Li, S. L. Ho, W. N. Fu, Zhigang Zhao et al.
This study proposes a new resonant magnetic charger comprising circular spiral coils that operate with a strong coupling effect between the transmitter and the receiver. The two spiral coils are fitted with additional copper tapes to serve as resonant transmitter and receiver coils. The magnetic flu ... [J. Appl. Phys. 111, 07E704 (2012)] published Fri Feb 10, 2012.
Fabrication of a fully magnetic impeller for improvement of the magnetic properties of a pump with a power harvester
Sung Hoon Kim, Jaewon Shin, Shuichiro Hashi, Kazushi Ishiyama, Masaru Ozaki et al.
An all-in-one wireless pump with a power generator was developed for use in biomedical applications. The developed pump is driven by an external rotating magnetic field. Thus, the performance of the system is limited by the magnetic properties of the rotor. To improve the magnetic properties of the ... [J. Appl. Phys. 111, 07E705 (2012)] published Fri Feb 10, 2012.
Quaternary memory device fabricated from a single layer Fe film
Taehee Yoo, S. Khym, Hakjoon Lee, Sangyeop Lee, Sanghoon Lee et al.
A cross-shaped Hall device was fabricated from a single-crystal bcc Fe film having two in-plane magnetic easy axes. When a current pulse is applied to a Au strip patterned on top of the Fe Hall device, multiple domains with two orthogonal magnetization directions form in the Fe Hall device during ma ... [J. Appl. Phys. 111, 07C704 (2012)] published Fri Feb 10, 2012.
The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories
Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu et al.
Oxygen migration is reported as key factors of resistive switching in graphene oxide (GO) based memories by different groups. A flexible nonvolatile resistive switching memory based on GO was fabricated through a spin-coating process. The speed of the SET and RESET operations of the GO memories was ... [Appl. Phys. Lett. 100, 063509 (2012)] published Fri Feb 10, 2012.
Investigation of the band offsets caused by thin AlO layers in HfO based Si metal oxide semiconductor devices
Lior Kornblum, Boris Meyler, Catherine Cytermann, Svetlana Yofis, Joseph Salzman et al.
Ultrathin dielectric capping layers are a prominent route for threshold voltage control in advanced Si devices. In this work the position of an AlO layer inside a HfO-based stack is systematically varied and investigated following a low and a high temperature anneal. Electrical results are compared ... [Appl. Phys. Lett. 100, 062907 (2012)] published Fri Feb 10, 2012.
Investigation of the device instability feature caused by electron trapping in pentacene field effect transistors
Chang Bum Park
The phenomenon of device instability governed by electron trapping was investigated in pentacene field-effect transistors. We found that the threshold voltage shift (DeltaV) increases significantly when the device is exposed to photo-irradiation with the depletion gate bias. This effect reveals that ... [Appl. Phys. Lett. 100, 063306 (2012)] published Fri Feb 10, 2012.
Electronic rectification devices from carbon nanocones
Chen Ming, Zheng-Zhe Lin, Jun Zhuang, and Xi-Jing Ning
The electronic rectification effects of single wall carbon nanocones (SWCNCs) with cone angles 113 degrees , 60 degrees , and 39 degrees are shown by density functional theory calculation and non-equilibrium Green's functional method, and the 113 degrees cone owns the best rectification. Based on ... [Appl. Phys. Lett. 100, 063119 (2012)] published Fri Feb 10, 2012.
Suppression of microwave rectification effects in electrically detected magnetic resonance measurements
C. C. Lo, F. R. Bradbury, A. M. Tyryshkin, C. D. Weis, J. Bokor et al.
Spin-dependent transport properties of micro- and nano-scale electronic devices are commonly studied by electrically detected magnetic resonance (EDMR). However, the applied microwave fields in EDMR experiments can induce large rectification effects and result in perturbations of the device bias con ... [Appl. Phys. Lett. 100, 063510 (2012)] published Fri Feb 10, 2012.
Thermal behavior of encapsulated phase change material energy storage
Hussain H. Al-Kayiem and Mohammed H. Alhamdo
The performance of thermal solar systems can be enhanced by extending its operational time by the aid of thermal energy storage. In the present work, the transient behavior of packed bed thermal energy storage (TES) was investigated experimentally and numerically. An experimental setup was designed ... [J. Renewable Sustainable Energy 4, 013112 (2012)] published Fri Feb 10, 2012.
The reflex gyrotron
A. L. Goldenberg, A. V. Savilov, and V. K. Yulpatov
A typical problem of low-power short-wavelength gyrotrons is that a too long cavity is required to provide the start of rf oscillations. Therefore, it is attractive to realize a gyrotron with a long enough operating region but relatively low diffraction Q-factor of the operating cavity. In this work ... [Phys. Plasmas 19, 024505 (2012)] published Thu Feb 9, 2012.
An electrooptic probe to determine internal electric fields in a piezoelectric transformer
Peter Norgard and Scott Kovaleski
A technique using the electrooptic effect to determine the output voltage of an optically clear LiNbO piezoelectric transformer was developed and explored. A brief mathematical description of the solution is provided, as well as experimental data demonstrating a linear response under ac resonant ope ... [Rev. Sci. Instrum. 83, 025106 (2012)] published Thu Feb 9, 2012.
Design and investigations of the superconducting magnet system for the multipurpose superconducting electron cyclotron resonance ion source
K. Tinschert, R. Lang, J. Mader, J. Rossbach, P. Spadtke et al.
The production of intense beams of heavy ions with electron cyclotron resonance ion sources (ECRIS) is an important request at many accelerators. According to the ECR condition and considering semi-empirical scaling laws, it is essential to increase the microwave frequency together with the magnetic ... [Rev. Sci. Instrum. 83, 02A319 (2012)] published Thu Feb 9, 2012.
A third-order complementary metaloxidesemiconductor sigma-delta modulator operating between 4.2 K and 300 K
Burak Okcan, Georges Gielen, and Chris Van Hoof
This paper presents a third-order switched-capacitor sigma-delta modulator implemented in a standard 0.35-[mu]m CMOS process. It operates from 300 K down to 4.2 K, achieving 70.8 dB signal-to-noise-plus-distortion ratio (SNDR) in a signal bandwidth of 5 kHz with a sampling frequency of 500 kHz at 30 ... [Rev. Sci. Instrum. 83, 024708 (2012)] published Thu Feb 9, 2012.
Wavelength-selective and diffuse emitter enhanced by magnetic polaritons for thermophotovoltaics
L. P. Wang and Z. M. Zhang
Both wavelength selectivity and directional insensitivity are highly desired in thermophotovoltaic applications. A concept of a magnetic-polariton-enhanced thermophotovoltaic emitter is presented. The predicted normal emittance from such a nanoengineered surface exceeds 0.8 in the wavelength region ... [Appl. Phys. Lett. 100, 063902 (2012)] published Thu Feb 9, 2012.
High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures
S.-L. Wang, J.-W. Yu, P.-C. Yeh, H.-W. Kuo, L.-H. Peng et al.
We investigate the transport properties of thin-film transistors using indium oxide (InO)/gallium oxide (GaO) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to [mu] = 51.3 cm/Vs and ON/OFF current ratio t ... [Appl. Phys. Lett. 100, 063506 (2012)] published Thu Feb 9, 2012.
Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization
Pil Sung Park, Digbijoy N. Nath, Sriram Krishnamoorthy, and Siddharth Rajan
We propose and demonstrate a two dimensional/three dimensional hybrid channel AlGaN/GaN high electron mobility transistor (HEMT) structure with a flat transconductance profile using polarization-induced channel engineering. A quasi three dimensional electron gas profile with 56 nm of vertical channe ... [Appl. Phys. Lett. 100, 063507 (2012)] published Thu Feb 9, 2012.
InGaN light-emitting diodes with indium-tin-oxide sub-micron lenses patterned by nanosphere lithography
Q. Zhang, K. H. Li, and H. W. Choi
Close-packed micro-lenses with dimensions of the order of wavelength have been integrated onto the indium-tin-oxide (ITO) layer of GaN light-emitting diodes employing nanosphere lithography. The ITO lens arrays are transferred from a self-assembled silica nanosphere array by dry etching, leaving the ... [Appl. Phys. Lett. 100, 061120 (2012)] published Thu Feb 9, 2012.
Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes
Kyu Sang Kim, Myoung Gyun Suh, and S. N. Cho
The Ni-dot/Ag/Pt layer, where Ni-dot layer is formed of nanometer sized Ni dots, has been used to improve the reflectivity from the surface of p-type GaN in a light emitting diode (LED). Comparing with Ni/Ag/Pt layer, where Ni layer is a thin film, the Ni-dot/Ag/Pt structure shows significantly impr ... [Appl. Phys. Lett. 100, 061113 (2012)] published Thu Feb 9, 2012.
Realizing the Multiparticle Hanbury BrownTwiss Interferometer Using Nitrogen-Vacancy Centers in Diamond Crystals
Li Dai and L. C. Kwek
We demonstrate that the multiparticle Hanbury BrownTwiss interferometer can be realized in a network of nitrogen-vacancy centers: for an N-particle system, the interference effect is manifested only in the Nth-order intensity correlation function. The interference effect can be enhanced through a po ... [Phys. Rev. Lett. 108, 066803 ] published .
Impact of scaling of dielectric thickness on mobility in top-contact pentacene organic thin film transistors
Vinay Kumar Singh and Baquer Mazhari
The effect of scaling of poly(methylmethacrylate) (PMMA) and cross-linkable poly(4-vinylphenol) (PVP) polymer dielectric thickness on field effect mobility in top contact pentance organic thin film transistors was investigated. Mobility at a constant gate voltage improved significantly with reductio ... [J. Appl. Phys. 111, 034905 (2012)] published Wed Feb 8, 2012.
Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first InGaAs metal-oxide-semiconductor field-effect-transistors
M. El Kazzi, L. Czornomaz, C. Rossel, C. Gerl, D. Caimi et al.
Metal-oxide-semiconductor (MOS) capacitors were fabricated by depositing composite 2 nm HfO/1 nm AlO/1 nm a-Si gate stacks on p-InGaAs/InP (001) substrates. Thanks to the presence of the AlO barrier layer, a minimum amount of the a-Si passivating layer is oxidized during the whole fabrication proces ... [Appl. Phys. Lett. 100, 063505 (2012)] published Wed Feb 8, 2012.
Fullerene acceptor for improving open-circuit voltage in inverted organic photovoltaic devices without accompanying decrease in short-circuit current density
Yutaka Matsuo, Junichi Hatano, Takayuki Kuwabara, and Kohshin Takahashi
A poly(3-hexylthiophene) (P3HT)-based inverted organic photovoltaic (OPV) device with a fullerene electron acceptor, (dimethyl(o-anisyl)silylmethyl)(dimethylphenylsilylmethyl)[60]fullerene (SIMEF2), exhibited 2.9% power conversion efficiency (PCE; J = 7.9 mA/cm, V = 0.66 V, and FF = 0.56) in the dev ... [Appl. Phys. Lett. 100, 063303 (2012)] published Wed Feb 8, 2012.
Horizontally aligned ZnO nanowire transistors using patterned graphene thin films
Hwansoo Kim, Ji-Hoon Park, Misook Suh, Joung Real Ahn, and Sanghyun Ju
Here we report the directed growth of ZnO nanowires on multilayer graphene films (MGFs) without the use of metal seed materials. The ZnO source substance was diffused onto the MGF surface, where nanowires tended to grow in the high surface energy sites. This property was exploited to fabricate top-g ... [Appl. Phys. Lett. 100, 063112 (2012)] published Wed Feb 8, 2012.
Efficient hybrid white polymer light-emitting devices with electroluminescence covered the entire visible range and reduced efficiency roll-off
Sujun Hu, Minrong Zhu, Qinghua Zou, Hongbin Wu, Chuluo Yang et al.
We report efficient hybrid white polymer light emitting devices (WPLEDs) fabricated via simple solution-proceeded process from a newly synthesized wide band-gap fluorene-co-dibenzothiophene-S,S-dioxide copolymer, which dually function as fluorescent blue emitter and host material for electrophosphor ... [Appl. Phys. Lett. 100, 063304 (2012)] published Wed Feb 8, 2012.
Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach
M. O. Nestoklon, O. Krebs, H. Jaffres, S. Ruttala, J.-M. George et al.
Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier. Significant anisotropies in both in-plane and out-of-plane geo ... [Appl. Phys. Lett. 100, 062403 (2012)] published Wed Feb 8, 2012.
Deformable transparent all-carbon-nanotube transistors
Shinya Aikawa, Erik Einarsson, Theerapol Thurakitseree, Shohei Chiashi, Eiichi Nishikawa et al.
We fabricated polymer-laminated, transparent, all-carbon-nanotube field-effect transistors (CNT-FETs), making use of the flexible yet robust nature of single-walled carbon nanotubes (SWNTs). All components of the FET (active channel, electrodes, dielectric layer, and substrate) consist of carbon-bas ... [Appl. Phys. Lett. 100, 063502 (2012)] published Tue Feb 7, 2012.
Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction
Shiyang Zhu, H. S. Chu, G. Q. Lo, P. Bai, and D. L. Kwong
An all-silicon photodetector integrated in a silicon-on-insulator waveguide for the telecom regime is proposed. The device is based on internal photoemission from electrically floating metal silicide nanoparticles (NPs) embedded in the space charge region of a Si p-n junction. Numerical simulation i ... [Appl. Phys. Lett. 100, 061109 (2012)] published Tue Feb 7, 2012.
Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor
Pushpapraj Singh, Woo-Tae Park, Jianmin Miao, Lichun Shao, Rama Krishna Kotlanka et al.
The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven times from 29 x 10 Pa to 207 x 10 P ... [Appl. Phys. Lett. 100, 063106 (2012)] published Tue Feb 7, 2012.
ZnO nanorods-graphene hybrid structures for enhanced current spreading and light extraction in GaN-based light emitting diodes
Jung Min Lee, Jaeseok Yi, Won Woo Lee, Hae Yong Jeong, Taeil Jung et al.
One-dimensional and two-dimensional hybrid structures, composed of vertical ZnO nanorods grown on large-area graphene, are successfully integrated onto the GaN/InGaN light emitting diodes (LEDs). Compared with GaN LED without transparent conducting electrode, current injection and light emission inc ... [Appl. Phys. Lett. 100, 061107 (2012)] published Tue Feb 7, 2012.
Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing
Woo-Suhl Cho, Mathieu Luisier, Dheeraj Mohata, Suman Datta, David Pawlik et al.
A homo-junction InGaAs tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the non-equilibrium Green's function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model [S. ... [Appl. Phys. Lett. 100, 063504 (2012)] published Tue Feb 7, 2012.
Superconducting low-inductance undulatory galvanometer microwave amplifier
D. Hover, Y.-F. Chen, G. J. Ribeill, S. Zhu, S. Sendelbach et al.
We describe a microwave amplifier based on the superconducting low-inductance undulatory galvanometer (SLUG). The SLUG is embedded in a microstrip resonator, and the signal current is injected directly into the device loop. Measurements at 30 mK show gains of 25 dB at 3 GHz and 15 dB at 9 GHz. Ampli ... [Appl. Phys. Lett. 100, 063503 (2012)] published Tue Feb 7, 2012.
Electrically driven nanopyramid green light emitting diode
S.-P. Chang, Y.-C. Chen, J.-K. Huang, Y.-J. Cheng, J.-R. Chang et al.
An electrically driven nanopyramid green light emitting diode (LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch, pillar side wall passivation, and epitaxial regrowth. Multiple quantum wells were selectively grown on the facets of the nan ... [Appl. Phys. Lett. 100, 061106 (2012)] published Tue Feb 7, 2012.
Effects of the transparent cathode on the performance of a relativistic magnetron with axial radiation
Wei Li, Yong-gui Liu, Jun Zhang, Ting Shu, Han-wu Yang et al.
Experimental investigation of the transparent cathode used in a relativistic magnetron with axial radiation is reported in this paper. The transparent cathode is composed of six separate stalks with the diameter of 6 mm. Under the working condition of 549 kV and ~0.38 T, the relativistic magnetron w ... [Rev. Sci. Instrum. 83, 024707 (2012)] published Tue Feb 7, 2012.
Charge pumping by magnetization dynamics in magnetic and semimagnetic tunnel junctions with interfacial Rashba or bulk extrinsic spin-orbit coupling
Farzad Mahfouzi, Jaroslav Fabian, Naoto Nagaosa, and Branislav K. Nikolic
We develop a time-dependent nonequilibrium Green function (NEGF) approach to the problem of spin pumping by precessing magnetization in one of the ferromagnetic layers within F|I|F magnetic tunnel junctions (MTJs) or F|I|N semi-MTJs in the presence of intrinsic Rashba spin-orbit coupling (SOC) at th ... [Phys. Rev. B 85, 054406 ] published .
The thermodynamic limits of magnetic recording
H. J. Richter, A. Lyberatos, U. Nowak, R. F. L. Evans, and R. W. Chantrell
Thermal stability of the recorded information is generally thought to set the limit of the maximum possible density in magnetic recording. It is shown that basic thermodynamics always cause the probability of success of the write process to be less than 100%. This leads to a thermally induced error ... [J. Appl. Phys. 111, 033909 (2012)] published Mon Feb 6, 2012.
Skin effect suppression for Cu/CoZrNb multilayered inductor
Noriyuki Sato, Yasushi Endo, and Masahiro Yamaguchi
The Cu/CoZrNb multilayer is studied as a conductor of a spiral inductor to suppress the skin effect at the 5 GHz range (matches IEEE 802.11 a standard) using negative-permeability in CoZrNb films beyond the ferromagnetic resonance frequency. The skin effect suppression becomes remarkable when the th ... [J. Appl. Phys. 111, 07A501 (2012)] published Mon Feb 6, 2012.
The weak pi pi interaction originated resonant tunneling and fast switching in the carbon based electronic devices
Jun He, Ke-Qiu Chen, and Chang Q. Sun
By means of the nonequilibrium Green's functions and the density functional theory, we have investigated the electronic transport properties of C based electronic device with different intermolecular interactions. It is found that the electronic transport properties vary with the types of the intera ... [AIP Advances 2, 012137 (2012)] published Mon Feb 6, 2012.
Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube field-effect transistors
Ji Cao and Adrian M. Ionescu
Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube (CNT) field-effect transistors (CNFETs) have been demonstrated. A nano-precision assembly method using resist-assisted ac-dielectrophoresis is applied. Superior I-V characteristics controlled by two independent lateral gates ... [Appl. Phys. Lett. 100, 063103 (2012)] published Mon Feb 6, 2012.
Analysis of Gouy phase shift for optimizing terahertz air-biased-coherent-detection
Huanyu He and X.-C. Zhang
Terahertz (THz) air-biased-coherent-detection (ABCD) uses a local oscillator to enhance THz-wave detection sensitivity by mixing an optical field, a THz field, and a biased electric field (local oscillator) in air. The width of the electrodes providing the local oscillator, the longitudinal distribu ... [Appl. Phys. Lett. 100, 061105 (2012)] published Mon Feb 6, 2012.
Ultraviolet electroluminescence from colloidal ZnO quantum dots in an all-inorganic multilayer light-emitting device
T. Omata, Y. Tani, S. Kobayashi, K. Takahashi, A. Miyanaga et al.
We report ultraviolet (UV) electroluminescence (EL) at 3.30 eV of colloidal ZnO quantum dots (QDs) in an inorganic multilayer thin-film EL device. The EL spectrum was identical to the photoluminescence spectrum of the source solution of ZnO QDs, and the emission is attributable to quantum confined e ... [Appl. Phys. Lett. 100, 061104 (2012)] published Mon Feb 6, 2012.
An explosively driven high-power microwave pulsed power system
M. A. Elsayed, A. A. Neuber, J. C. Dickens, J. W. Walter, M. Kristiansen et al.
The increased popularity of high power microwave systems and the various sources to drive them is the motivation behind the work to be presented. A stand-alone, self-contained explosively driven high power microwave pulsed power system has been designed, built, and tested at Texas Tech University's ... [Rev. Sci. Instrum. 83, 024705 (2012)] published Mon Feb 6, 2012.