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October 1986

Volume 39, Issue 10

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Special Issue: The Science of VLSI

John A. Armstrong
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Reactive‐Ion Etching

Gottlieb S. Oehrlein
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Plasma‐based dry etching processes offer higher accuracy in replicating device patterns than wet etching patterns, but further advances may depend on a better understanding of gas‐phase phenomena and plasma‐surface interactions.

The Growth of Novel Silicon Materials

John C. Bean
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Epitaxial growth of germanium‐silicon alloys or metal silicides on silicon produces structures that can be used in high‐performance optical and electronic devices.

VLSI Technology and Dielectric Film Science

Frank J. Feigl
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The oxide of silicon is mechanically stable, electrically insulating and chemically protective; it forms an integral part of nearly every integrated circuit, but we still need to determine many details about its structure and properties.

Interconnections in VLSI

Prabhakar B. Ghate
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Making reliable connections between a million or more electronic components on a single chip requires a multidisciplinary approach involving thin conducting and dielectric films, chemical reactions and diffusion at interfaces.

Compound‐Semiconductor Transistors

Lester F. Eastman
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Faster electrons, direct bandgaps and smaller power dissipation translate into electronic devices with higher operating frequencies, compatibility with optics and a tolerance of closer packing.
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Quasiperiodic Pulsars

F. Curtis Michel
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Rename Livermore

Mary B. Lawrence
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More on Maxwell

Ivan Tolstoy and Daniel M. Siegel
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Physics‐Information Group?

Alfred J. Hodina
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Aharanov‐Bohm Effect

Francisco Izaguirre
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Physicists' Terminology

David Mermin
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Polarized Scattering

Thomas R. Love
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Capping Research Overhead

Robert J. Yaes
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Physics Classroom Revisited

Peter Froehle, Peter Lindenfeld, and George Pallrand
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Einstein and the Vatican

P. A. A. Laura
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The Refereeing Process

Alwyn Eades
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Reanalysis of Old Eötvös Data Suggests 5th Force…To Some

Bertram Schwarzschild
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Joint Vacuum‐Science Meeting in Baltimore

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Bird of Passage: Recollections of a Physicist

Rudolf Peierls and Hendrik B. G. Casimir, Reviewer
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Accretion Power in Astrophysics

J. Frank, A. R. King, D. J. Raine, and Jacob Shaham, Reviewer
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Statistical Optics

Joseph W. Goodman and Lorenzo M. Narducci, Reviewer
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New Books

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New Products

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Five Physicists Receive Lawrence Awards

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ACA Fankuchen Award to Rossmann

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In Brief

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FREE

James Rainwater

W. W. Havens, Jr.
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Japan and US Sign Truce in Microchip War; Victor in Doubt

Irwin Goodwin
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Bardon's Reputation in NSF Physics Precedes Him to NATO

Irwin Goodwin
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Breeders and Reprocessing are Challenged in Germany, UK

William Sweet
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AURA Gets New Leadership

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ACA Elects Bugg Vice‐President

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New German Research Reactor Proposed

William Sweet
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New AIP Translation Journal on Chinese Lasers Appears

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Anderson is President‐Elect of AGU

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Prewitt Heads Geophysical Laboratory

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In Brief

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POPA Forms Committee to Assess Physics‐Workforce Issue

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Newsletter in Applied Physics is Launched

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SSC—Costs and Consequences

Robert K. Adair
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