Effect of the anisotropy distribution on the coercive field and switching field distribution of bit patterned media
P. Krone, D. Makarov, T. Schrefl, and M. Albrecht
We present a systematic study on the magnetization reversal in square arrays of magnetic nanostructures. To account for the unavoidable inhomogeneities of the magnetic properties due to, i.e., template preparation, a distribution of magnetic anisotropy values was taken into account. We show that the ... [J. Appl. Phys. 106, 103913 (2009)] published Fri Nov 20, 2009.
Simultaneous low-frequency noise characterization of gate and drain currents in AlGaN/GaN high electron mobility transistors
Hemant Rao and Gijs Bosman
Room temperature low frequency noise characteristics of gate and drain currents of an AlGaN/GaN high electron mobility transistor are reported. A Hooge parameter (alpha) ranging from 10 to 10 is extracted for drain current noise as a function of sheet carrier density. Gate current noise is simultane ... [J. Appl. Phys. 106, 103712 (2009)] published Fri Nov 20, 2009.
Fully bendable polymer light emitting devices with carbon nanotubes as cathode and anode
Zhibin Yu, Liangbing Hu, Zhitian Liu, Mingliang Sun, Meiliang Wang et al.
Polymer light emitting devices were fabricated by roll lamination using single-walled carbon nanotubes as both anode and cathode. The devices exhibited a low turn-on voltage of 3.8 V, high brightness of 1400 cd/m at 10 V and maximum efficiency of 2.2 cd/A at 480 cd/m. The devices are also highly t ... [Appl. Phys. Lett. 95, 203304 (2009)] published Thu Nov 19, 2009.
Charging Effects in the Inductively Shunted Josephson Junction
Jens Koch, V. Manucharyan, M. H. Devoret, and L. I. Glazman
The choice of impedance used to shunt a Josephson junction determines if the charge transferred through the circuit is quantized: a capacitive shunt renders the charge discrete, whereas an inductive shunt gives continuous charge. This discrepancy leads to a paradox in the limit of large inductances ... [Phys. Rev. Lett. 103, 217004 (2009)] published Thu Nov 19, 2009.
Anisotropic Deposition of Localized Electroless Nickel for Preferential Bridge Connection
Tokihiko Yokoshima, Yasuhiro Yamaji, Katsuya Kikuchi, Hiroshi Nakagawa, and Masahiro Aoyagi
Preferential bridge connection by localized electroless NiB deposition was investigated. The phenomenon of bridge formation by so-called extraneous deposition was utilized as a technique to perform the selective deposition of NiB on organic surfaces. The films used for bridging were preferentially d ... [J. Electrochem. Soc. 157, D65 (2009)] published Wed Nov 18, 2009.
Interfering pathways in benzene: An analytical treatment
Thorsten Hansen, Gemma C. Solomon, David Q. Andrews, and Mark A. Ratner
The mechanism for off-resonant electron transport through small organic molecules in metallic junctions is predominantly coherent tunneling. Thus, new device functionalities based on quantum interference could be developed in the field of molecular electronics. We invoke a partitioning technique to ... [J. Chem. Phys. 131, 194704 (2009)] published Wed Nov 18, 2009.
Fabrication of a transparent and flexible thin film transistor based on single-walled carbon nanotubes using the direct transfer method
S. H. Tseng and N. H. Tai
The fabrication of transparent and flexible thin film transistors (TFTs), using single-walled carbon nanotube (SWCNT) networks as bottom gates and conducting channels and polymethylmethacrylate (PMMA) as an insulating layer, by the direct transfer method is demonstrated. The fabricated SWCNT-TFTs ex ... [Appl. Phys. Lett. 95, 204104 (2009)] published Wed Nov 18, 2009.
Comparison between hot spot modeling and measurement of a superconducting hot electron bolometer mixer at submillimeter wavelengths
Wei Miao, Yan Delorme, Alexandre Feret, Rolland Lefevre, Benoit Lecomte et al.
This paper presents the modeling and measurement of a quasioptical niobium nitride superconducting hot electron bolometer mixer at submillimeter wavelengths. The modeling is performed with a distributed hot spot model which is based on solving a heat balance equation for electron temperature along t ... [J. Appl. Phys. 106, 103909 (2009)] published Wed Nov 18, 2009.
Inverse lithography for 45-nm-node contact holes at 1.35 numerical aperture
Monica Laurel Kempsell, Eric Hendrickx, Alexander Tritchkov, Kyohei Sakajiri, Kenichi Yasui et al.
Inverse lithography technology (ILT) is a procedure that optimizes the mask layout to produce an image at the wafer with the targeted aerial image. For an illumination condition optimized for dense pitches, ILT inserts model-based subresolution assist features (AF) to improve the imaging of isolated ... [J. Micro/Nanolith. MEMS MOEMS 8, 043001 (2009)] published Wed Nov 18, 2009.
Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes
Y. Feng, K. Lee, H. Farhat, and J. Kong
This work examines the enhancement of current on/off ratio in field effect transistor devices with bundled single-walled carbon nanotubes (CNTs) by incorporating a substrate etching step before the electrical cutting for metallic CNT elimination. The etching step prevents the damaging of the semicon ... [J. Appl. Phys. 106, 104505 (2009)] published Tue Nov 17, 2009.
Dissipative Enhancement of the Supercurrent in TlBaCaCuO Intrinsic Josephson Junctions
P. A. Warburton, S. Saleem, J. C. Fenton, M. Korsah, and C. R. M. Grovenor
We have measured dissipation-induced localization of the reaction coordinate for a metastable-state decay process in a model system with moderate damping. Specifically, the supercurrent in an array of TlBaCaCuO intrinsic Josephson junctions is larger when all the junctions are in the zero-voltage st ... [Phys. Rev. Lett. 103, 217002 (2009)] published Tue Nov 17, 2009.
Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors
Sakulsuk Unarunotai, Yuya Murata, Cesar E. Chialvo, Hoon-sik Kim, Scott MacLaren et al.
This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1550 degrees C in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bi ... [Appl. Phys. Lett. 95, 202101 (2009)] published Mon Nov 16, 2009.
The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures
F. Gonzalez-Posada Flores, C. Rivera, and E. Munoz
The results of x-ray characterization presented in this work show that the strain state of the AlGaN and GaN layers is modified by the Ohmic contact deposition and subsequent annealing, as well as by the SiN passivation. In both cases, the tensile strain for the AlGaN layer decreases whereas the res ... [Appl. Phys. Lett. 95, 203504 (2009)] published Mon Nov 16, 2009.
Blue light-emitting diodes with a roughened backside fabricated by wet etching
Chia-Feng Lin, Chun-Min Lin, Kuei-Ting Chen, Wan-Chun Huang, Ming-Shiou Lin et al.
The InGaN-based light-emitting diodes (LEDs) with a roughened patterned backside on the N-face GaN surface were fabricated through a crystallographic etching process to increase light-extraction efficiency. After laser decomposition, laser scribing, and a lateral crystallographic wet etching process ... [Appl. Phys. Lett. 95, 201102 (2009)] published Mon Nov 16, 2009.
Effects of the alkyl chain length in phosphonic acid self-assembled monolayer gate dielectrics on the performance and stability of low-voltage organic thin-film transistors
Kenjiro Fukuda, Takanori Hamamoto, Tomoyuki Yokota, Tsuyoshi Sekitani, Ute Zschieschang et al.
We have fabricated pentacene organic thin-film transistors (TFTs) using self-assembled monolayers (SAMs) based on alkyl-phosphonic acids with five different alkyl chain lengths as the gate dielectric and investigated the relationship between the SAM chain length and the electrical performance and st ... [Appl. Phys. Lett. 95, 203301 (2009)] published Mon Nov 16, 2009.
X-ray absorption spectroscopy of biomimetic dye molecules for solar cells
Peter L. Cook, Xiaosong Liu, Wanli Yang, and F. J. Himpsel
Dye-sensitized solar cells are potentially inexpensive alternatives to traditional semiconductor solar cells. In order to optimize dyes for solar cells we systematically investigate the electronic structure of a variety of porphyrins and phthalocyanines. As a biological model system we use the heme ... [J. Chem. Phys. 131, 194701 (2009)] published Mon Nov 16, 2009.
Analytical model of the quasistatic mechanical behavior of galvanic piezoelectric microelectromechanical system switches
Olaf Wunnicke
An analytical model of the quasistatic behavior of galvanic piezoelectric microelectromechanical system (MEMS) switches is described. The model is based on the EulerBernoulli beam equation. Two geometries often used in galvanic switches are investigated: the single clamped cantilever (SCC) and the d ... [J. Appl. Phys. 106, 104502 (2009)] published Mon Nov 16, 2009.
Publisher's Note: Damping and decoherence of a nanomechanical resonator due to a few two-level systems [Phys. Rev. B 80, 174103 (2009)]
Laura G. Remus, Miles P. Blencowe, and Yukihiro Tanaka
Abstract not available. [Phys. Rev. B 80, 179901 (2009)] published Fri Nov 13, 2009.
Multichannel carbon nanotube field-effect transistors with compound channel layer
Changxin Chen, Wei Zhang, and Yafei Zhang
A multichannel carbon nanotube field-effect transistor (MC-CNTFET) with compound channel layer has been built. In this MC-CNTFET, a dispersedly directed array of long single-walled carbon nanotubes (SWCNTs) is used as primary channel layer and a randomly aligned monolayer network of short SWCNTs act ... [Appl. Phys. Lett. 95, 192110 (2009)] published Fri Nov 13, 2009.
Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric
Hong Bae Park, Chang Seo Park, Chang Yong Kang, Seung-Chul Song, Byoung Hun Lee et al.
Effects of Gd capping of HfSiON gate dielectric on the characteristics of n metal-oxide-semiconductor field effect transistor (nMOSFET) with TaC gate electrode were investigated. MOSFETs with an in situ deposited Gd/TaC bilayer demonstrated a reduced equivalent oxide thickness, 0.9 nm, and low V, 0. ... [Appl. Phys. Lett. 95, 192113 (2009)] published Fri Nov 13, 2009.
Strong ferromagnetic Josephson devices with optimized magnetism
J. W. A. Robinson, Z. H. Barber, and M. G. Blamire
We show that by interfacing Co with Rh in Nb-based superconductor-ferromagnetic-superconductor (SFS) Josephson devices, the bulk magnetization of the Co barrier is completely preserved, thus eliminating the issue of a magnetic dead layer present in other SFS devices. Electrical measurements demonstr ... [Appl. Phys. Lett. 95, 192509 (2009)] published Fri Nov 13, 2009.
Agility of vortex-based nanocontact spin torque oscillators
M. Manfrini, T. Devolder, Joo-Von Kim, P. Crozat, N. Zerounian et al.
We study the agility of current-tunable oscillators based on a magnetic vortex orbiting around a point contact in spin valves. The theory predicts that frequency tuning by currents occurs at constant orbital radius so an exceptional agility is anticipated. To test this, we have inserted an oscillato ... [Appl. Phys. Lett. 95, 192507 (2009)] published Fri Nov 13, 2009.
The Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structure
Po-Yi Kuo, Yan-Syue Huang, Yi-Hsien Lue, Tien-Sheng Chao, and Tan-Fu Lei
n- and p-channel poly-Si thin-film transistors with fully Ni-self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate structure (n- and p-channel FUSA-TFTs) have been successfully fabricated on a 40 nm thick channel layer. The conventional poly-Si gate is replaced by the fully Ni-sil ... [J. Electrochem. Soc. 157, H113 (2009)] published Fri Nov 13, 2009.
Strain Stability and Carrier Mobility Enhancement in Strained Si on Relaxed SiGe-on-Insulator
Xiaobo Ma, Weili Liu, Xuyan Liu, Xiaofeng Du, Zhitang Song et al.
A low thermal budget process to fabricate strained Si metal-oxide-semiconductor field-effect transistors (MOSFETs) on a strain-relaxed silicongermanium-on-insulator (SGOI) by strain engineering is described. The strain stability in the top strained Si is studied after low temperature oxidation, ion ... [J. Electrochem. Soc. 157, H104 (2009)] published Fri Nov 13, 2009.