Theory of fundamental microwave absorption in sapphire (alpha-AlO)
Nicolas A. Shtin, Jose Mauricio Lopez Romero, and Eugene Prokhorov
An accurate model for intrinsic dielectric loss in sapphire (alpha-AlO) is presented. The proposed model is based on a theory of electromagnetic field absorption governed by multiphonon relaxation processes influenced by a finite lifetime of thermal phonons. Expressions for anisotropic sapphire diel ... [J. Appl. Phys. 106, 104115 (2009)] published Fri Nov 20, 2009.
Charge order, dielectric response, and local structure of LaSrNiO system
M. Filippi, B. Kundys, S. Agrestini, W. Prellier, H. Oyanagi et al.
Charge ordering, dielectric permittivity, and local structure of LaSrNiO system have been explored by x-ray charge scattering, complex dielectric impedance spectroscopy, and extended x-ray absorption fine structure (EXAFS) measurements, made on the same single crystal sample. The local structure mea ... [J. Appl. Phys. 106, 104116 (2009)] published Fri Nov 20, 2009.
Orientation dependence of ferroelectric behavior of BiFeO thin films
Jiagang Wu and John Wang
Multiferroic BiFeO (BFO) thin films with (111), (100), (110) preferred, and random orientations were deposited by radio frequency magnetron sputtering on SrRuO-buffered SrTiO(111), SrTiO(100), SrTiO(110), and Pt(111)/Ti/SiO/Si(100) substrates, respectively. The orientation dependences of ferroelectr ... [J. Appl. Phys. 106, 104111 (2009)] published Thu Nov 19, 2009.
Significant suppression of space charge injection into linear low density polyethylene by surface oxyfluorination
Zhenlian An, Chen Xie, Yue Jiang, Feihu Zheng, and Yewen Zhang
Surface oxyfluorination of linear low density polyethylene (LLDPE) was performed to suppress space charge injection and accumulation under direct current high voltage. Significant suppression effect that there is almost no space charge inside LLDPE was obtained, as observed by space charge measureme ... [J. Appl. Phys. 106, 104112 (2009)] published Thu Nov 19, 2009.
Size effect on magnetic and ferroelectric properties in BiFeO multiferroic ceramics
Z. M. Tian, S. L. Yuan, X. L. Wang, X. F. Zheng, S. Y. Yin et al.
Magnetic and ferroelectric properties are investigated for the polycrystalline BiFeO ceramics with different grain sizes (602000 nm) synthesized by a modified Pechini method. It shows that magnetic and ferroelectric properties are strongly dependent on the grain size. For the 60 nm samples, the magn ... [J. Appl. Phys. 106, 103912 (2009)] published Thu Nov 19, 2009.
Dielectric response of tantalum oxide subject to induced ion bombardment during oblique sputter deposition
S. C. Barron, M. M. Noginov, D. Werder, L. F. Schneemeyer, and R. B. van Dover
We describe the deposition of insulating tantalum oxide thin films under conditions of controlled ion bombardment, which can be achieved using reactive sputtering on 90 degrees off-axis substrates with an applied substrate bias. Capacitive measurements of TaO deposited on unbiased off-axis substrat ... [J. Appl. Phys. 106, 104110 (2009)] published Wed Nov 18, 2009.
Flexure mode flexoelectric piezoelectric composites
Baojin Chu, Wenyi Zhu, Nan Li, and L. Eric Cross
We present a flexure mode composite design to generate steep transverse strain gradient to exploit large flexoelectric coefficient [mu] of (Ba,Sr)TiO (BST) ceramics. Very strong direct piezoelectric effect was observed in composites due to the flexoelectricity. In a single unit composite, sharp low ... [J. Appl. Phys. 106, 104109 (2009)] published Tue Nov 17, 2009.
Origin(s) of the apparent high permittivity in CaCuTiO ceramics: clarification on the contributions from internal barrier layer capacitor and sample-electrode contact effects
Ming Li, Zhijian Shen, Mats Nygren, Antonio Feteira, Derek C. Sinclair et al.
CaCuTiO ceramics with a range of resistivities have been prepared using both conventional sintering and spark plasma sintering. For all cases, the high effective permittivity is associated primarily with an internal barrier layer capacitor mechanism. Additional polarization associated with the elect ... [J. Appl. Phys. 106, 104106 (2009)] published Tue Nov 17, 2009.
Dielectric, ferroelectric, and piezoelectric behaviors of AgNbOKNbO solid solution
Desheng Fu, Mitsuru Itoh, and Shin-ya Koshihara
Phase evolution in the (AgK)NbO (AKN) solid solution was investigated by x-ray diffraction, dielectric, and ferroelectric measurements. At room temperature, there are three phase boundaries at x[approximate]0.07, x[approximate]0.20, and x[approximate]0.8. When x
Phenomenological classification of stress-induced leakage current and time-dependent dielectric breakdown mechanism
Hiroshi Miyazaki, Daisuke Kodama, and Naohito Suzumura
The time-dependent dielectric breakdown (TDDB) of Cu damascene interconnects was investigated, noting the time variations in stress-induced leakage current. Copper interconnects normally have symmetric current-voltage curves, which suggests that defects are distributed symmetrically between two Cu l ... [J. Appl. Phys. 106, 104103 (2009)] published Tue Nov 17, 2009.
Effects of oxygen vacancy on ferroelectricity in Ba(FeNb)O thin films grown by pulsed laser deposition
Wei Zhang, Lei Li, and Xiang Ming Chen
Well-crystallized Ba(FeNb)O thin films were grown on Pt/TiO/SiO/Si substrates in various oxygen pressures at 550 degrees C by pulsed laser deposition. X-ray diffraction analysis revealed that the thin films had a single phase of perovskite structure. The lattice constants of thin films increased ob ... [J. Appl. Phys. 106, 104108 (2009)] published Tue Nov 17, 2009.
Nonuniversal percolation exponents and broadband dielectric relaxation in carbon black loaded epoxy composites
S. El Bouazzaoui, A. Droussi, M. E. Achour, and C. Brosseau
In this study we present measurements and data analysis of the dielectric relaxation in carbon black (CB) loaded epoxy composites over a wide range of CB concentration (below and above the percolation threshold) and a broad range of frequency (1801.5 x 10 Hz). We show that our data are in conflict ... [J. Appl. Phys. 106, 104107 (2009)] published Tue Nov 17, 2009.
Threshold fields in the dc bias dependence of dielectric responses of relaxor ferroelectric terpolymer films
X. J. Meng, B. Dkhil, P. F. Liu, J. L. Wang, J. L. Sun et al.
The dc bias dependence of dielectric properties has been investigated for poly (vinylindene fluoride-trifluoroethylene-chlorofluoroethylene) relaxor terpolymer films. The frequency dependence of the temperature of the permittivity maximum, T, was analyzed using the VogelFulcher (VF) relation. Two th ... [J. Appl. Phys. 106, 104102 (2009)] published Tue Nov 17, 2009.
Evolution of 180 degrees , 90 degrees , and vortex domains in ferroelectric films
Manas Kumar Roy, Shamik Sarkar, and Sushanta Dattagupta
A Landau-like theory of phase transition and its time-dependent generalization are shown to be sufficient for describing the formation and kinetics of 180 degrees , 90 degrees , and vortex (toroidal) domains in ferroelectric thin films. The theory relies only on the choice of boundary conditions and ... [Appl. Phys. Lett. 95, 192905 (2009)] published Fri Nov 13, 2009.
Properties of Ultrathin High Permittivity (NbTa)O Films Prepared by Aqueous Chemical Solution Deposition
A. Hardy, S. Van Elshocht, D. Dewulf, S. Clima, N. Peys et al.
Ultrathin (NbTa)O films, with thicknesses from ~3 to ~25 nm, were deposited by chemical solution deposition starting from aqueous precursor solutions. The film's dielectric properties were characterized by capacitancevoltage and currentvoltage measurements. Permittivities ranged from 20 to 31 aft ... [J. Electrochem. Soc. 157, G13 (2009)] published Fri Nov 13, 2009.
Dielectric Response of TaO, NbO, and NbTaO from First-Principles Investigations
S. Clima, G. Pourtois, A. Hardy, S. Van Elshocht, M. K. Van Bael et al.
High-kappa dielectrics are intensively investigated as a replacement for SiO in integrated nanoelectronics. In particular, for the next generation of dynamic random access memory metalinsulatormetal capacitors, the Ta- and Nb-based oxides are among the most interesting candidates that display a rela ... [J. Electrochem. Soc. 157, G20 (2009)] published Fri Nov 13, 2009.
Nature of the Magnetic Order and Origin of Induced Ferroelectricity in TbMnO
S. B. Wilkins, T. R. Forrest, T. A. W. Beale, S. R. Bland, H. C. Walker et al.
The magnetic structures which endow TbMnO with its multiferroic properties have been reassessed on the basis of a comprehensive soft x-ray resonant scattering (XRS) study. The selectivity of XRS facilitated separation of the various contributions (Mn L edge, Mn 3d moments; Tb M edge, Tb 4f moments), ... [Phys. Rev. Lett. 103, 207602 (2009)] published Thu Nov 12, 2009.
Magnetoelectric coupling in polycrystalline FeVO
Bohdan Kundys, Christine Martin, and Charles Simon
We report coupling between magnetic and electric orders for antiferromagnetic polycrystalline FeVO in which magnetism-induced polarization has been recently found in noncollinear antiferromagnetic state below the second antiferromagnetic phase transition at T[approximate]15.7 K. In this low symmetr ... [Phys. Rev. B 80, 172103 (2009)] published Wed Nov 11, 2009.
Erratum: dc field effect on stability of piezoelectric PZN-0.06PT single crystals under compressive stress [Appl. Phys. Lett. 95, 072902 (2009)]
Chiaki Okawara and Ahmed Amin
Abstract not available. [Appl. Phys. Lett. 95, 199901 (2009)] published Wed Nov 11, 2009.
Dielectric, ferroelectric, and pyroelectric characterization of Mn-doped 0.74Pb(MgNb)O0.26PbTiO crystals for infrared detection applications
Linhua Liu, Xiaobing Li, Xiao Wu, Yaojin Wang, Wenning Di et al.
We investigated the dielectric, ferroelectric, and pyroelectric properties of Mn-doped 0.74Pb(MgNb)O0.26PbTiO crystals. Compared with pure PMN-0.26PT, Mn substitutions resulted in reduced dielectric loss and enhanced coercive field. Furthermore, the pyroelectric coefficient and detectivity figures o ... [Appl. Phys. Lett. 95, 192903 (2009)] published Wed Nov 11, 2009.
Influence of combined external stress and electric field on electric properties of 0.5% Fe-doped lead zirconate titanate ceramics
J. Suchanicz, N.-T. H. Kim-Ngan, K. Konieczny, I. Jankowska-Sumara, D. Sitko et al.
Influence of uniaxial pressure (01000 bars) applied parallel to or perpendicularly to the ac or dc electric field (in one-dimensional or two-dimensional manner) on dielectric and ferroelectric properties of hard lead zirconate titanate (PZT) ceramics were investigated. The experimental results revea ... [J. Appl. Phys. 106, 094109 (2009)] published Wed Nov 11, 2009.