g-Factor Tuning and Manipulation of Spins by an Electric Current
Zbyslaw Wilamowski, Hans Malissa, Friedrich Schaffler, and Wolfgang Jantsch
We investigate the Zeeman splitting of the two-dimensional electron gas in an asymmetric silicon quantum well, performing electron-spin-resonance (ESR) experiments. Applying a small dc current we observe a shift in the resonance field due to the additional current-induced Bychkov-Rashba type of spin ... [Phys. Rev. Lett. 98, 187203 (2007)] published Thu May 3, 2007.
Influence of the quantum-confined Stark effect in an InGaN/GaN quantum well on its coupling with surface plasmon for light emission enhancement
Cheng-Yen Chen, Yen-Cheng Lu, Dong-Ming Yeh, and C. C. Yang
The authors analyze the contribution of the screening of the quantum-confined Stark effect (QCSE) to the emission enhancement behavior in the process of surface plasmon (SP) coupling with an InGaN/GaN quantum well (QW), which is 20 nm away from a Ag thin film that supports the SP. From the measurem ... [Appl. Phys. Lett. 90, 183114 (2007)] published Wed May 2, 2007.
Intersubband absorption with different sublevel couplings in [(CdS/ZnSe/BeTe)/(ZnSe/BeTe)] double quantum wells
G. W. Cong, R. Akimoto, K. Akita, T. Hasama, and H. Ishikawa
The authors demonstrated the strong sublevel coupling on the intersubband absorption at telecommunication wavelengths in asymmetric II-VI double quantum wells consisting of a deep CdS well and a shallow ZnSe well coupled by a 1-monolayer-thick BeTe barrier. With increasing ZnSe well thickness, the s ... [Appl. Phys. Lett. 90, 181919 (2007)] published Wed May 2, 2007.
Mechanism of all-optical spin-dependent polarization switching in Bragg-spaced quantum wells
D. T. Nguyen, N. H. Kwong, Z. S. Yang, R. Binder, and Arthur L. Smirl
The authors outline a microscopic theory of pump-induced anisotropy in the optical response of Bragg-spaced quantum wells (BSQWs). Their theory explains the manipulation of the band structure of the BSQWs by the pump through the microscopic interactions between excitons in the quantum wells. They ap ... [Appl. Phys. Lett. 90, 181116 (2007)] published Wed May 2, 2007.
Surface heterostructure nanomechanical actuators with atomic resolution
Jan D. Makowski and Joseph J. Talghader
A continuously tunable vertical actuator with subnanometer resolution is presented. It consists of a heterostructure cantilever which has collapsed over a 125 nm thick nanogap. Its operating principle relies on the temperature dependence of the adhesion energy between two InGaAs surface quantum wel ... [Appl. Phys. Lett. 90, 183111 (2007)] published Wed May 2, 2007.
Photonic crystal effect on light emission from InGaN/GaN multi-quantum-well structures
Keunjoo Kim, Jaeho Choi, Sang Cheol Jeon, Jin Soo Kim, and Hee Mok Lee
Triangular hole arrays with nanoscaled lattice constants of 230 and 460 nm were fabricated on a p-type GaN epitaxial layer grown on an InGaN/GaN multi-quantum-well light emitting diode structure by metal-organic chemical vapor deposition. The hole geometries of dry-etched thin slabs for triangular ... [Appl. Phys. Lett. 90, 181115 (2007)] published Wed May 2, 2007.
Enhancement of the electron spin memory by localization on donors in a CdTe quantum well
J. Tribollet, E. Aubry, G. Karczewski, B. Sermage, F. Bernardot et al.
We present easily reproducible experimental conditions giving rise to a long electron spin memory at low temperature. The proposed system consists of an electron localized by a donor potential, and immerged in a quantum well. We have measured, by using photoinduced Faraday rotation technique, the sp ... [Phys. Rev. B 75, 205304 (2007)] published Wed May 2, 2007.
Intersubband antipolaritons: Microscopic approach
M. F. Pereira, Jr.
This paper demonstrates that the coupling between light and intersubband excitations in semiconductors is fundamentally different from the well understood coupling to interband transitions that leads to excitonic polaritons. Numerical results for III-V quantum wells under nonequilibrium conditions a ... [Phys. Rev. B 75, 195301 (2007)] published Wed May 2, 2007.
Short period magnetic coupling oscillations in Co/Si multilayers: Role of crystallization and interface quality
Nader Yaacoub, Christian Meny, Corinne Ulhaq-Bouillet, Manuel Acosta, and Pierre Panissod
In this work we show, in a transition-metal-semiconductor system, that both the interfacial quality and the crystallographic structure of the samples play an important role to allow the observation of the predicted properties of the system. To reduce the interfacial mixing, Co/Si multilayers were gr ... [Phys. Rev. B 75, 174402 (2007)] published Wed May 2, 2007.
Application of Czochralski-grown SiGe bulk crystal as a substrate for luminescent strained quantum wells
Noritaka Usami, Ryota Nihei, Ichiro Yonenaga, Yoshitaro Nose, and Kazuo Nakajima
Czochralski-grown Si[sub 1x]Ge[sub x] bulk crystal (x=0.085) was utilized as a substrate for strained Si-based quantum wells (QWs). The linewidth of the (400) x-ray rocking curve of the SiGe(100) substrate was comparable with that of the Si(100) substrate, and no peak splitting was observed in the l ... [Appl. Phys. Lett. 90, 181914 (2007)] published Tue May 1, 2007.
Photon number resolving detector based on a quantum dot field effect transistor
B. E. Kardynal, S. S. Hees, A. J. Shields, C. Nicoll, I. Farrer et al.
The authors show that the change in current flowing through the channel of a quantum dot field effect transistor is proportional to the number (N) of photons absorbed from an incident pulse. Distinct features due to photon number state up to N=3 are resolved. With improvement of external quantum eff ... [Appl. Phys. Lett. 90, 181114 (2007)] published Tue May 1, 2007.
A three-dimensional model of single-electron tunneling between a conductive probe and a localized electronic state in a dielectric
N. Zheng, C. C. Williams, E. G. Mishchenko, and E. Bussmann
Motivated by recent measurements of force detected single-electron tunneling, we present a three-dimensional model for the tunneling rate between a metallic tip and a localized electronic state in a dielectric surface. The tip is assumed to be semi-infinite, with electron wave functions approximated ... [J. Appl. Phys. 101, 093702 (2007)] published Tue May 1, 2007.
Magnetization switching in alternating width nanowire arrays
S. Goolaup, A. O. Adeyeye, N. Singh, and G. Gubbiotti
A systematic investigation of the magnetization reversal mechanism in arrays of Ni[sub 80]Fe[sub 20] nanowires with alternating width is presented. The structures were fabricated using deep ultraviolet lithography followed by lift-off technique at 248 nm exposure wavelength. We have mapped the magn ... [Phys. Rev. B 75, 144430 (2007)] published Mon Apr 30, 2007.
Excited states of Na nanoislands on the Cu(111) surface
T. Hakala, M. J. Puska, A. G. Borisov, V. M. Silkin, N. Zabala et al.
Electronic states of one monolayer high Na nanoislands on the Cu(111) surface are studied as a function of the nanoisland size. Properties of nanoislands such as one-electron states, the electron density, and the associated potential are obtained self-consistently within the density-functional forma ... [Phys. Rev. B 75, 165419 (2007)] published Fri Apr 27, 2007.
On the ultrastrong vacuum Rabi coupling of an intersubband transition in a semiconductor microcavity
Cristiano Ciuti and Iacopo Carusotto
In this invited paper of the 28th International Conference of the Physics of Semiconductors (ICPS-28), we discuss the peculiar quantum electrodynamical properties of a semiconductor microcavity system, in which a cavity photon mode is strongly coupled to an intersubband transition of a doped quantum ... [J. Appl. Phys. 101, 081709 (2007)] published Fri Apr 27, 2007.
Quantum ballistic phenomena in nanostructures of paraelectric PbTe
G. Grabecki
This article reviews recent developments in the physics of lead telluride nanostructures. PbTe is a IVVI narrow gap paraelectric semiconductor, characterized by the huge static dielectric constant epsilon>1000 at helium temperatures. Methods of gating and nanostructure fabrication of modulation dope ... [J. Appl. Phys. 101, 081722 (2007)] published Fri Apr 27, 2007.
Spin-glass shell and magnetotransport properties of a La[sub 0.67]Ca[sub 0.33]MnO[sub 3] nanoring network
M. H. Zhu, Y. G. Zhao, W. Cai, X. S. Wu, S. N. Gao et al.
The magnetotransport and magnetic property of the La[sub 0.67]Ca[sub 0.33]MnO[sub 3] (LCMO) nanoring network (NRN) have been investigated. This NRN-LCMO shows a giant magnetoconductance at low temperatures with strong memory effect of magnetic field. Its high field magnetoconductance shows linear fi ... [Phys. Rev. B 75, 134424 (2007)] published Fri Apr 27, 2007.
Perspectives of Using ZnO/Zn[sub 1 - x]Mn[sub x]O Quantum Wells
T. Tchelidze, E. Chikoidze, Z. Kvinikadze, and Y. Dumont
In order to estimate the perspectives of using ZnO/Zn[sub 1x]Mn[sub x]O quantum wells for increasing Curie temperature in this staucture we investigate excitons in ZnO/Zn[sub 1x]Mn[sub x]O quantum wells. The existence of week built-in electric field is investigated. Electric field and Coulomb intera ... [AIP Conf. Proc. 899, 663 (2007)] published Fri Apr 27, 2007.
Time- and locally resolved photoluminescence of semipolar GaInN/GaN facet light emitting diodes
Thomas Wunderer, Peter Bruckner, Joachim Hertkorn, Ferdinand Scholz, Gareth J. Beirne et al.
The authors investigate the carrier lifetime and photoluminescence (PL) intensity of a semipolar GaInN/GaN sample which was realized by growing five GaInN/GaN quantum wells on the {1[overline 1]01} side facets of selectively grown n-GaN stripes that have a triangular shape running along the <11[over ... [Appl. Phys. Lett. 90, 171123 (2007)] published Fri Apr 27, 2007.